摘要
二硫化钼(MoS2)的光电子性质与其层数密切相关,少层MoS2因其潜在的应用前景而得到了广泛的研究。本文采用化学气相沉积(CVD)法成功制备了单层高质量的MoS2样品,分别用光学显微镜、拉曼光谱、PL光谱对其表面形貌和光电性能进行了表征,重点探讨了生长时间对MoS2样品的生长及其光电性能的影响。结果表明,通过控制生长时间能有效调控MoS2的形貌和光电性能,单层MoS2的最佳生长时间为25 min。
The photoelectric properties of molybdenum disulfide(MoS2)are closely related to the number of layers.The few-layer MoS2 has been widely studied for its potential application prospect.In this paper,high quality monolayer MoS2 samples were successfully prepared by chemical vapor deposition(CVD)method.The surface morphology and photoelectric properties of MoS2 samples were characterized by optical microscope,Raman spectroscopy and PL spectroscopy,respectively.The effect of growth time on the growth and photoelectric properties of MoS2 samples was discussed.The results show that the morphology and photoelectric properties of MoS2 can be effectively tailored by adjusting the growth time,and the optimum growth time of monolayer MoS2 is 25 min.
作者
石侃
张敏
祝祖送
SHI Kan;ZHANG Min;ZHU Zusong(School of Physics&Electrical Engineering,Anqing Normal University,Anqing 246133,China)
出处
《中国照明电器》
2019年第12期7-11,共5页
China Light & Lighting
基金
安徽省高校自然科学研究重点项目(KJ2019A0575)
教育部产学合作协同育人项目(201802070102)
安庆师范大学资助项目(2017JYXM034)
安庆师范大学物理与电气工程学院资助项目(Wdxy2018jyxm001).
关键词
二硫化钼
化学气相沉积
生长时间
晶化质量
molybdenum disulfide
chemical vapor deposition
growth time
crystalline quality
