摘要
针对Micro-LED与背板的键合技术,分析和总结了现有用于集成电路及MEMS器件中导电键合技术,并结合Micro-LED特点,对Micro-LED键合技术进行了分析和总结,针对高分辨率微显示的Micro-LED外延片键合技术,可以采用集成电路及MEMS器件中直接键合、表面活化键合、黏着键合、共晶键合、纳米键合、激光和超声辅助键合等常用键合技术,而对于巨量转移实现Micro-LED显示技术,更适宜采用黏着键合、共晶键合、金属微纳结构键合和激光辅助键合。共晶键合技术应用广泛,具有从材料到设备以及工艺等方面成熟的解决方案,是现有键合方案中最具前景的一种。
Analyzing and summarizing the current conductive bonding technology used in integrated circuits and MEMS devices for the bonding technology of Micro-LED and backplane,considering the characteristics of Micro-LED,the bonding technology of Micro-LED is analyzed and summarized,Micro-LED wafer bonding technology for high resolution micro display can use current bonding technology,such as direct bonding,surface activated bonding,adhesive bonding,eutectic bonding,metal micro-nano structure bonding,ultrasonic assisted bonding and laser assisted bonding,while for mass transfer to achieve Micro-LED display technology,it is more suitable to use adhesive bonding,eutectic bonding,metal micro-nano structure bonding and Laser assisted bonding.Eutectic bonding technology is widely used and has mature solutions from materials to equipment and processes.It is the most promising solution for Micro-LED bonding.
作者
王明星
曹占锋
卢鑫泓
王珂
袁广才
WANG Mingxing;CAO Zhanfeng;LU Xinhong;WANG Ke;YUAN Guangcai(LCD R&D Center,BOE,Beijing 100029,China)
出处
《微纳电子与智能制造》
2021年第3期120-128,共9页
Micro/nano Electronics and Intelligent Manufacturing