原子层刻蚀技术研究进展

Research progress in atomic layer etching technology

随着现在集成电路技术的不断发展,构成芯片的核心器件尺寸在不断地缩小,芯片的加工制造变得越来越精细。主要综述了有望在纳米级芯片器件加工过程中发挥关键作用的原子层刻蚀(ALE)技术最近几年来的研究进展。首先介绍了晶体管尺寸进一步缩小后,在刻蚀材料的选择性和物理化学反应的原子级控制方面面临的主要挑战;接着对ALE技术的基本原理进行了详细介绍;进一步重点概括了ALE技术在应用于微电子器件中的半导体薄膜、氧化物薄膜、氮化物薄膜、金属薄膜的国内外研究成果。此外,还介绍了ALE技术应用在新型二维材料方面的进展情况。

With the continuous development of integrated circuit technology,the sizes of the key devices of the integrated circuit(IC)chip are shrinking.As a result,the process and manufacturing of the chip is becoming more and more sophisticated.The recent research progress of atomic layer etching(ALE)technology is reviewed,which is expected to play a key role in the fabrication of miniature chip devices.Firstly,the main challenges in the etching selectivity of IC materials and the atomic level control of physicochemical reactions are introduced as the transistor size is further reduced.The basic principle of ALE technology is then presented in detail.Furthermore,the research achievements of ALE technology in semiconductor,oxide,nitride,and metal films applied in microelectronic devices are summarized.In addition,the research progress in ALE of new two-dimensional materials is also given.