摘要
研究了测量磁头表面超薄DLC薄膜和Si中间层厚度的方法,所用的设备有:AES,XPS,TEM。研究结果显示,XPS和AES测量的结果较为吻合,TEM的结果则存在较大差异。在TEM高分辩像下无法分清DLC和Si层,并对AES,XPS和TEM结果产生差异的原因进行了分析。
Methods of measuring the thickness of ultra-thin DLC film and Si interlayer were investigated by AES,XPS,TEM in present paper.The results of XPS and AES are consistent,but a discrepancy existed between them with TEM.Clearing interface of DLC and Si layers can't be observed in HRTEM image.Furthermore,what led the different measured thickness among above three methods were investigated.
出处
《材料工程》
EI
CAS
CSCD
北大核心
2006年第z1期28-30,共3页
Journal of Materials Engineering