EUV光刻中激光等离子体光源的发展被引量：5

Development of Laser Produced Plasma Source for EUV Lithography

下载PDF

导出

摘要简述了获得极紫外光源的途径,系统介绍了激光等离子体(LPP)光源的发展历程,对当前Cymer公司研制的极紫外光刻设备所需LPP光源的最新研究进展做了详细阐述,最后对光源的整体发展给予了总结和展望。 The production of extreme ultraviolet (EUV) was introduced. Simultaneously, the development of the laser produced plasma (LPP) sources was systemically described and the last development of Cymer's LPP sources for EUV lithography was reviewed in detail. Finally, a summary was given and some prospects for EUV source research were proposed.

作者张福昌李艳秋

机构地区中国科学院电工研究所

出处《微细加工技术》 EI 2006年第5期1-7,12,共8页 Microfabrication Technology

基金 863IC装备专项资助国家重点基础研究发展计划(973计划)资助项目(2003CB716204)

关键词极紫外光刻激光等离子体极紫外光功率碎片污染 EUV lithography LPP EUV power debris contamination

分类号 TN305.7 [电子电信—物理电子学]

引文网络
相关文献

参考文献56

1[1]International Technology Roadmap for Semiconductors[Z].2004 Update Tables,http://public.itrs.net/,2005-06-08.
2[2]Biswas Abani,Brueck S R J.Simulation of the 45-nm half-pitch node with 193-nm immersion lithography-imaging interferometric lithography and dipole illumination[J].J Microlith Microfab and Microsys,2004,3:35-43.
3[3]Murphy J B.X-ray lithography sources:a review[A].Particle Accelerator Conference[C].New York:IEEE,1989,2:757-760.
4[4]Murphy J B,White D L,MacDowell Alastair A,et al.Synchrotron radiation sources and condensers for projection X-ray lithography[J].Appl Opt,1993,32(34):6920-6929.
5[5]Benschop Jos P H,Kaiserb Winfried M,Ockwell David C,et al.Euclides,the European EUVL program[A].Part of the SPIE Conference on Emerging Lithographic Technologies Ill[C].Santa Clara(California):SPIE,1999,3676:246-252.
6[6]Dattoli Guiseppe,Doria Andrea,Gallerano Gian Piero,et al.Extreme ultraviolet(EUV)sources for lithography based on synchrotron radiation[J].Nuclear Instruments and Methods in Physics Research A,2001,474:259-272.
7[7]Lebert R,Bergmann K,Schriever G,et al.A gas discharged based radiation source for EUV-lithography[J].Microelectronic Engineering,1999,46:449-452.
8[8]Stamm U,Kleinschmidt J,Gbel K,et al.EUV Source development at XTREME technologies an update[EB/OL].http://www.sematech.org/meetings/archives.htm,2005-02-27.
9[9]Schriever G,Stamm U,Gbel K,et al.High power EUV sources based on gas discharge plasmas and laser produced plasmas[J].Microelectronic Engineering,2002,61-62:83-84.
10[10]Knight Larry V,Turley R Steven,Crawford Chris,et al.EUV spectroscopy of ultrafast capillary discharges[J].Proceedings of SPIE,1999,3767:45-49.

<12 3 4 5 6 >

同被引文献27

1王占山.极紫外光刻给光学技术带来的挑战[J].红外与激光工程,2006,35(z2). 被引量：2
2程元丽,李思宁,王骐.激光等离子体和气体放电EUV光刻光源[J].激光技术,2004,28(6):561-564. 被引量：7
3Rik Jonckheere,Gian Francesco Lorusso,Anne Marie Goethals, etc, Full field EUV lithography turning into a reality at IMEC [C] .SPIE Proceedings Vol. 6607, May 2007:277.
4Bruno LaFontaine; Yunfei Deng; Ryoung-Han Kim etc. The use of EUV lithography to produce demonstration devic es [C]. SPIE Proceedings Vol. 6921, Emerging Litho graphic Technologies XII, Frank M. Schellenberg, Editors, March 2008: 210.
5A. Hassanein, V. Sizyuk, T. Sizyuk. Multidimensional simulation and optimization of hybrid laser and discharge plasma devices for EUV lithography[C]. SPIE Vol. 692: E merging Lithographic Technologies XII, Frank M. Schel lenberg, Editors, 2008 March: 692.
6Peter Clarke. IMEC expects pre-production EUV litho tool early 2010[J]. EE Times, 2008, (10) :18.
7DAVID C B,IGOR V F,ALEX IE,? al.Laser procuced plasma source system development. Proceedings of SPIE the International Society for Optical Engineering . 2008
8TAKSSHI S,GEORG S,MASATO M, et al.Evaluation at the intermediate focus for EUV light source. Proceedings of SPIE the International Society for Optical Engineering . 2009
9NORBERT R,ALEX I E,WILLIAM F M, et al.EUV source collector. Proceedings of SPIE the International Society for Optical Engineering . 2006
10AK1RA E,HIROSHI K,YOSHIFUMI U , et al.Laser produced plasma source development for EUV lithography. Proceedings of SPIE the International Society for Optical Engineering . 2009