量子阱结构对GaN基紫光二极管性能的影响

Effect of MQW Structure on Characteristic of GaN-Base Violet LED

采用不同MQW结构在MOCVD系统上生长UV-LED外延片。对样品进行了X射线衍射、电注入发光(EL)和光致发光谱(PL)测试,通过优化LED器件材料的生长条件,获得了光发光特性一般而电发光特性优良的高质量多量子阱紫光LED外延片。

GaN-base violet LEDs′ wafers with different MQW structures were grown by MOCVD.X-ray diffraction,electroluminence and photoluminence were applied to study the characteristic of wafers.Optimizing epitaxial process,high quality violet LEDs′ wafers with good electroluminence property have been grown.