碲锌镉晶片退火的显微Raman光谱分析

Study on the Annealing Cadmium Zinc Telluride Substrate Wafers by Micro-Raman Spectrum

测量了 4 块不同退火条件处理碲锌镉晶片的显微 Raman 光谱,观察到了与碲锌镉材料及材料中Te 沉积晶格振动相对应的 Raman 散射峰,发现了位于 327 cm-1/332 cm-1 的新峰。通过对碲锌镉晶片进行退火处理,有效的消除了 Te 沉积,比较碲锌镉晶片退火前后的显微 Raman 光谱,指出 327 cm-1/332cm-1 散射峰只可能由来源于类 CdTe 或类 ZnTe 的二级声子散射引起,与碲锌镉材料中的 Te 沉积无关。

The four cadmium zinc telluride crystal wafers of having different annealing condition were measured by means of Raman microscopy. Besides the basic phonon vibrations from cadmium zinc telluride crystal and tellurium precipitates were recognized, one new Raman peak at 327cm-1/332cm-1was observed. Through the annealing of cadmium zinc telluride crystal wafers, the tellurium precipitates were eliminated. The Raman peak at 327cm-1/332cm- 1 was proposed to belong to the CdTe-like or ZnTe-like two-phonon vibrational mode by comparing the micro-Raman spectra of different annealing cadmium zinc telluride crystal wafers. The Raman peak at 327cm-1/332cm-1 is not correlative with the tellurium precipitates in the cadmium zinc telluride crystal.