固溶处理对NiTi薄膜中位错密度的影响

Effect of Solution Treatment on Dislocation Density in NiTi Thin Films

用磁控溅射法将 NiTi 薄膜沉积在纯 Cu 箔片上,在 800℃分别固溶 30 min,45 min,60 min 和 120 min;采用X 射线傅氏线形分析法计算各固溶时间的位错密度及位错分布参量。随固溶时间的增加,平均位错密度不断下降; 亚晶粒尺寸 D 逐渐增加; 平均位错分布参量基本不变。由位错密度及位错分布参量计算得到 NiTi 薄膜材料的显微硬度值,随固溶时间的增加,显微硬度计算值明显低于测量值。

The NiTi thin films were sputter-deposited on Cu foil. The thin films subjected to solution treatment at 800degreesC for 30 min; 45 min; 60 min and 120 min. X-ray diffraction profile Fourier analysis have been used to study the variation, of the dislocation density and the dislocation distribution parameters during solution treatment. It has been found that the average dislocation density decreases and the coherent domain size gradually increases with the increase of solution treating time. The average dislocation distribution parameters are unchanged as the average dislocation density decreases. Microhardness was calculated from the dislocation data. The results show that the microhardness values are not in a good agreement between calculated values and measured values.