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Tantalum oxide barrier in magnetic tunnel junctions

Tantalum oxide barrier in magnetic tunnel junctions
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摘要 Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy (XPS) was used to characterize the oxidation states of Ta barrier. The experimental results show that the chemical state of tantalum is pure Ta^(5+) and the thickness of the oxide is 1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usually used in MTJs to form an intermetallic compound, NiTa_2. A magnetic 'dead layer' could be produced in the NiFe/Ta interface. The 'dead layer' is likely to influence the spinning electron transport and the magnetoresistance effect. Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy (XPS) was used to characterize the oxidation states of Ta barrier. The experimental results show that the chemical state of tantalum is pure Taand the thickness of the oxide is 1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usually used in MTJs to form an intermetallic compound, NiTa. A magnetic "dead layer" could be produced in the NiFe/Ta interface. The "dead layer" is likely to influence the spinning electron transport and the magnetoresistance effect.
出处 《Rare Metals》 SCIE EI CAS CSCD 2004年第3期230-230,共1页 稀有金属(英文版)
关键词 magnetic tunnel junctions (MTJs) insulating barrier TaO_x X-ray photoelectron spectroscopy (XPS) magnetic tunnel junctions (MTJs) insulating barrier TaO_x X-ray photoelectron spectroscopy (XPS)
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