多指条nMOSFET抗ESD设计技术

ESD protection design for multi-finger nMOSFET

利用多指条nMOSFET进行抗ESD设计是提高当前CMOS集成电路抗ESD能力的一个重要手段,本文针对国内某集成电路生产线,利用TLP(TransmissionLinePulse)测试系统,测试分析了其nMOSFET单管在ESD作用下的失效机理,计算了单位面积下单管的抗ESD(ElectroStaticDischarge)能力,得到了为达到一定抗ESD能力而设计的多指条nMOSFET的面积参数,并给出了要达到4000V抗ESD能力时保护管的最小面积,最后通过ESDS试验进行了分析和验证。

The conduction phenomenon of nMOSFET under ESD is analyzed using TLP technology. The ESD robustn ability of per unit area nMOSFET with certain foundry is estimated. Using these parameters, an ESD protection circuit w multi-finger nMOSFET for CMOS IC is designed quantificationally to meet the requirement of circuit.