金刚石薄膜在不同金属衬底上的低温沉积

Deposition of Diamond Film on Different Metal Substrates at Low Tepmerature

本文研究了采用微波等离子体辅助化学气相沉积方法在几种碳化物形成元素衬底上生长金刚石薄膜的可能性。用扫描电镜和 X 射线衍射等手段对薄膜的形貌和结构进行了分析。结果表明,在620～650℃的沉积条件下,各衬底表面均可生长出晶体特征良好的金刚石薄膜;在衬底和薄膜之间均存在一到二种碳化物过渡层,其组成与较高温度沉积条件下获得的碳化物有一定区别,趋于形成碳含量较低的碳化物相。在若干种衬底上,如 Mo、Nb、Ta、Si 和 Ti 上,获得了与基体结合良好的金刚石薄膜。

The possibility of growing diamond film on nine carbide formingelements by microwave plasma enhanced CVD has been studied.The morpho-logy and crystal structure of diamond films were investigated by means of SEMand X-ray diffraction.It was found that diamonds with good crystallinity weredeposited on all the substrate materials in the temperature range of 620—650℃,with 1-2 kinds of carbide as intermediate layer.The chemical composition ofthe carbide layer consists less carbon than that obtained at higher depositiontemperatures (higher than 800℃).The adhesion between diamond films andthe substrates differs considerably,which showes close relationship to the di-fference in crystal structures between diamond and the carbide.By the lowtemperature deposition method,it is able to obtain diamond films with goodadhesion to several substrate materials,such as Mo,Nb,Ta,Si and Ti.