期刊文献+

一种提高SiO_2凝胶玻璃中ZnSe纳米晶稳定性的方法 被引量:3

Enhancement of the Stability of ZnSe Nanocrystals Doped in Silica by a New Method
下载PDF
导出
摘要 ZnSe nanocrystals doped in silica were prepared by using sol-gel process and in situ growth technique. It was found that when n(Zn)∶n(Se)=1∶1 in the sol precursor, the resultant ZnSe nanocrystals were rather instable and after several days the color of the ZnSe nanocrystals-doped SiO 2 glass changed from yellow to red. According to the analysis results of XRD, UV-Vis transmission spectra and XPS, the existence of many zinc vacancies in the ZnSe nanocrystals was considered as the reason of the instability. Based on this reason, the synthesis process was improved by introducing much larger amount of zinc to the precursor sol and this made the stability of the ZnSe nanocrystals improved greatly from several days to more than 6 months. ZnSe nanocrystals doped in silica were prepared by using sol-gel process and in situ growth technique. It was found that when n(Zn)∶n(Se)=1∶1 in the sol precursor, the resultant ZnSe nanocrystals were rather instable and after several days the color of the ZnSe nanocrystals-doped SiO 2 glass changed from yellow to red. According to the analysis results of XRD, UV-Vis transmission spectra and XPS, the existence of many zinc vacancies in the ZnSe nanocrystals was considered as the reason of the instability. Based on this reason, the synthesis process was improved by introducing much larger amount of zinc to the precursor sol and this made the stability of the ZnSe nanocrystals improved greatly from several days to more than 6 months.
出处 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2005年第1期155-157,共3页 Chemical Journal of Chinese Universities
基金 国家重大基础研究发展计划 (批准号 :2 0 0 2 CB613 3 0 5 ) 中国 -以色列国际合作项目资助
关键词 ZNSE 纳米晶 稳定性 Zn空位 ZnSe Nanocrystals Stability Zn vacancies
  • 相关文献

参考文献4

二级参考文献11

  • 1[1]Alivisatos A P. Semiconductor clusters, nanocrystals, and quantum dots. Science, 1996, 271: 933
  • 2[2]Klimov Victor I. Optical nonlinearities and ultrafast carrier dynamics in semiconductor nanocrystals. J Phys Chem B, 2000, 104: 6112
  • 3[3]Dabbousi B O, Rodriguez-Viejo J, et al. (CdSe)ZnS cpre-shell quantum dots: synthesis and characterization of a size series of highly luminescent nanocrystallites. J Phys Chem B, 1997, 101: 9463
  • 4[4]Katayama K, Yao H, Nakanishi F, et al. Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates. Appl Phys Lett, 1998, 73: 102
  • 5[5]Empedocles S A, Norris D J, Bawendi M G. Photoluminescence spectroscopy of single cdse nanocrystallite quantum dots. Phys Rev Lett, 1996, 77: 3873
  • 6[6]Efros A L, Efros A. Interband absorption of light in a semiconductor sphere. Sov Phys Semicond, 1982, 16: 772
  • 7[7]Brus L E. Electron-electron and electron-hole interaction in small semiconductor crystallites: The size dependence of the lowest exited electronic state. J Phys Chem, 1984, 80(9): 4403
  • 8[8]Lavallard P. Excitons in nanocrystals. J Cryst Growth, 1998, 184/185: 352
  • 9[9]Xia J B. Electronic structures of zero-dimension quantum wells. Phys Rev B, 1989, 40: 8500
  • 10[10]Cardona M, Guntherrodt G. Light Scattering in Solids. Berlin, Heidelbery, New York: Spring-Verlag, 1980

共引文献20

同被引文献26

引证文献3

二级引证文献10

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部