摘要
通过对非晶Ni和Si多层组分调制膜(ML)中Ni和Si互扩散规律的原位X射线衍射法研究,考察了金属Ni在非晶Si(a-Si)中的扩散现象。得到了较低温度下Ni在非晶Si中扩散系数及规律,并且提出了Ni在a-Si中受非平衡缺陷延迟的间隙扩散机制。这个扩散模型较好地解释了Ni在a-Si中的扩散。
he diffusion mechanism of the Ni in amorphous Si was studied by in situ X-ray diffraction technique in amorphous Ni/Si multilayer. The temperature dependent diffusivity of Ni in amorphous Si was obtained in the form of Arrheneius relationship. A trap-retarded interstitial diffusion mechanism is suggested to explain the diffusion process of Ni in amorphous Si.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第9期1505-1509,共5页
Acta Physica Sinica