摘要
本文研究了GaAs/GaAlAs双异质结光波导开关内波导层带隙的载流子注入感生变化.给出了带隙变化值随注入载流子浓度变化的关系曲线,并与带填充理论和带隙收缩理论的计算结果进行了对比分析.
Abstract The injected carrier-induced band-gap change in GaAs/GaAlAs double heterostructure waveguide optical switch has been studied. The curves between the band-gap change values and injected carrier concentrations are shown. The experimental results is compared with the computed results by using the band-filling theory and band-gap shrinkage theory.