摘要
本文对ＧａＡｓＭＥＳＦＥＴ正向肖特基结电压Ｖｇｓｆ随温度的变化特性进行了测量与分。析，得到了在较宽的温度范围内恒定电流下的Ｖｇｓｆ随温度的变化有很好的线性关系，并发现其温度系数α＝ｄＶｇｓｆ／ｄＴ与测试电流有关，随着Ｉ的增大｜α｜减少．经过对试验点的拟合发现，ｋＴ与Ｉ的变化满足指数关系，且Ｖｇｓｆ随温度的变化曲线在不同的测试电流下具有聚焦特性，即在绝对零度时，不同电流下的Ｖｇｓｆ具有相同的值．据此，我们得到了新的肖特基结电流电压关系式，很好地解释了Ｖｇｓｆ－Ｔ曲线与测试电流的关系及其不同测试电流下的聚焦特性．
Abstract We measured. and analysed the variation of forward Schottky junction voltage with temperature and found that the temperature coefficient α= dVgsf/dT depends on the testing current. The |α| rises with the testing current I. Through regression with the experiment value, we found that the relation between a and I meets the power function, and also found that the forward variation of voltage Vgsf with temperature has the focus feature in different testing current, e.g. T= OK, all the Vgsf in dfferent current approach the same value. From this characteristic, we give the new relation formula of forward Sckottky juncution I-V. It includes the real factor influence, explains the focus feature well.
