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磁控溅射镱薄膜的制备及压阻特性 被引量:3

Piezoresistance Characteristics of Ytterbium Thin Film Grown by Magnetron Sputtering
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摘要 使用直流磁控溅射的方法在聚酰亚胺上制备镱薄膜 ,XRD分析薄膜的晶体结构 ,SEM表征薄膜的形貌 ,利用一级轻气炮进行了 1 5GPa~ 2 5GPa的冲击加载压阻测试。研究结果表明 ,压阻系数依赖于薄膜的晶粒尺寸 ,经 30 0℃热处理 1h ,镱薄膜晶粒长大 ,薄膜结构更为致密 ,膜内缺陷减少 ,压阻系数有明显提高。 The structures and morphology of ytterbium thin films,grown on polyimide sheets by DC magnetron sputtering,were studied with X-ray diffraction (XRD) and scanni ng electron microscopy (SEM).Piezo-resistance characteristics of the ytterbium films under impacts ranging from 1.5 GPa to 2.5 GPa was evaluated in the singl e stage gas gun.The results show that the piezo-resistance coefficient k de pends on grain size of the film.We found that one hour annealing at 300℃ signif icantly improves the ytterbium film quality,by enlarging its grain size,betterin g its compactness and reducing its density of defects.
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2004年第6期472-474,480,共4页 Chinese Journal of Vacuum Science and Technology
基金 军事电子预研基金资助 (No.AW0 3 0 412 )
关键词 薄膜结构 系数 直流磁控溅射 晶体结构 表征 冲击加载 形貌 晶粒尺寸 晶粒长大 热处理 Ytterbium thin film,Magnetron sputtering,Piezoresistance coefficent,Heat treatme nt
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参考文献11

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同被引文献39

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