PZT铁电薄膜纳米尺度铁电畴的场致位移特性

Field-induced displacement properties of nanoscale domain structure in PZT thin film

利用扫描力显微术的压电响应模式 ,并基于逆压电效应原理 ,研究了梯度组成的PZT铁电薄膜纳米尺度铁电畴的场致位移特性 .获得了源于纳米尺度铁电畴的压电效应和电致伸缩效应贡献的场致位移回滞线 ,以及源于线性压电效应和电畴反转效应综合贡献的纳米尺度压电位移 场强蝶形曲线 ,证实了Caspari Merz理论在纳米尺度上的有效性 .发现了梯度铁电薄膜存在纳米尺度印刻现象 ,认为该现象的内因源于薄膜中的内偏场 .

Nanoscale characterization of field-induced displacement was made in compositionally graded PZT thin film according to the inverse piezoelectric effects by SFM in contact mode. The nanoscale piezoelectric displacement - electric field butterfly loop was obtained due to the combined contribution from linear piezoelectric effect and domain switching effect, which substantiate nanoscale validity of Caspari-Merz theory. The nanoscale imprint phenomena were also observed in the thin film.