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高功率半导体开关DSRD在UWB雷达中的应用 被引量:9

Application of High Power Solid State Switch DSRD in UWB Radar
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摘要 讨论了一种先进的全固态、高速、高功率半导体开关DSRD的物理特性、工作原理、性能特点。利用DSRD的物理特性,提出了一种先进的超宽带雷达发射信号设计方法。利用该方法设计的超宽带雷达发射机具有高功率、高重频、体积小、重量轻、长寿命、高可靠等优点。 In this paper the physical property, working principle, and characteristics of an advanced solid-state, fast, high power switch are discussed. Exploiting the DSRD (Drift Step Recovery Device) characteristics, the design method of an advanced UWB radar transmission signal is proposed. The UWB radar transmitter designed in this way has the main advantages of high power, high repeating frequency, long life, very good stability (low jitter), small size, light weight and high reliability.
出处 《现代雷达》 CSCD 北大核心 2005年第5期69-71,共3页 Modern Radar
基金 国家 863高技术 807重大专项课题资助。
关键词 漂移阶跃恢复开关组件 超宽带脉冲 雪崩效应 DSRD UWB pulse avalanche effect
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参考文献2

  • 1Igor V Grekhov. Physical basis for high power semiconductor nanosecond and sub-nanosecond switches. High - Voltage Engineering, 1998,11:1318 - 1320
  • 2Martin J C. Novel semiconductor devices by pulse systems group. Solid - State Eletronics, 1989,32 (11) :923 -927

同被引文献64

  • 1黄裕年,任国光.高功率超宽带电磁脉冲技术[J].微波学报,2002,18(4):90-94. 被引量:27
  • 2贾望屹,王敬东,孔波,杨文波.新器件雷达发射机技术的研究[J].火控雷达技术,2004,33(3):17-19. 被引量:8
  • 3樊孝明,林基明,郑继禹,仇洪冰.超宽带极窄脉冲设计与产生[J].现代雷达,2006,28(3):87-90. 被引量:11
  • 4肖建平.DSRD高功率超宽谱脉冲源及其功率合成初探[J].电子信息对抗技术,2007,22(4):15-18. 被引量:7
  • 5Prokhorenko V P, Boryssenko A A. High power subnanosecond generator for UWB radar [ J ]. Utra-Wideband, Short- Pulse Electromagetics ,2002,473 (6) :473 - 477.
  • 6Grekov I V, Efanov V M, Kardo Sysoev A F, et al. Power drift step recovery diodes (DSRD) [ J ]. Solid-State Electron, 1985,28(6) :597 - 599.
  • 7Brylevsky V I, Efonov V M, Kardo-sysyev A F, et al. Power nanosecond semiconductor opening plasma switches [ C ]// Conference Record of the 1996 Twenty-second International Power Modulator Symposium[ S. l. ] : IEEE Press, 1996:51 -54.
  • 8Grekhov I V. Physical basis for high power semiconductor nanosecond and sub-nanosecond switches [ J ]. High-Voltage Engineering, 1998,11 : 1 318 - 1 320.
  • 9KARDO-SYSOEV A F,EFANOV V M,CHASHNIKOV I G.Fast power switches from picosecond tO nanosecond time scale and their application to pulsed power[C]∥Proc of Tenth IEEE International Pulsed Power Conference.Albuquerque,NM,1995.
  • 10BRYIEVSKY V I,EFANOV V M,KARDO-SYSYEV A F,et al.Power nanosecond semiconductor opening plasma switches[C]//Proc of Twenty-Second International Power Modulator Symposium.Boca Raton,FL,1996.

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