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电场下GaAs/Ga_(1-x)Al_xAs量子阱中的子带和激子 被引量:4

SUBBANDS AND EXCITONS IN A GaAs/Ga_(1-x)Al_xAs QUANTUM WELL IN AN ELECTRIC FIELD
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摘要 本文利用有限势垒模型,研究电场对GaAs/Ga_(1-x)Al_xAs量子阱中子带和激子的影响。对阱宽为105的GaAs/Ga_(0.66)Al_(0.34)As量子阱,电场由0—1.2×10~5V/cm,我们计算了电子和空穴的子带以及激子的结合能。基于上述计算结果,所得电子-空穴重叠函数和激子峰的能量移动与实验测量符合得较好。 The effect of an electric field on the subbands and excitons in a GaAs/Ga1-xAlxAs quantum well is studied by using a finite-potential-barrier model. The subbands of electrons and holes and the binding energies of excitons have been calculated for GaAs/Al0.34 Ga0.66 As quantum well (L = 105 A) in electric field ranging from O to 1.2×105 V/cm. Based on these, the electron-hole overlap functions and the energy shifts of excitons corresponding to different subbands are obtained, they agree well with experimental results.
机构地区 清华大学物理系
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 1989年第3期385-393,共9页 Acta Physica Sinica
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参考文献3

  • 1夏建白,物理学报,1988年,37卷,1页
  • 2朱帮芬,第六届全国半导体物理学术会议,1987年
  • 3朱嘉麟,半导体学报

同被引文献19

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