摘要
阐述了从喇曼光谱测量三元化合物半导体的双模频移和双模强度比率来确定含金组分。提出了由共振喇曼散射研究半导体的能带结构。实验观测了半导体 GaP在间接带隙(Γ_8?—Χ_(3c))附近的2TA和2TO双声子共振特性。实验表明共振喇曼散射可以测定半导体的直接带隙和间接带隙。
A method has been developed for determining the alloy compositions of ternary Ⅲ-Ⅴ compoudn semiconductors by measuring their Raman spectroscopy and the intensity ratio of the two mode behaviour for the long-wavelength optical phonons, A method ats6 is presented for studying the energy band structure of semiconductors by resonant Raman scattering. Resonant behaviour of two-TA and two-TO-phonon modes at the indirect gap (γ80-X3C) are investigated for GaP.
出处
《厦门大学学报(自然科学版)》
CAS
CSCD
北大核心
1989年第5期484-488,共5页
Journal of Xiamen University:Natural Science
基金
福建省自然科学基金
关键词
喇曼光谱
半导体带隙
合金组分
Raman spectroscopy, Energy gap of semiconductor, Alloy composition