MBECdTe／GaAs光致发光研究

PHOTOLUMINESCENCE STUDY OF EPITAXIAL CdTe/GaAs GROWN BY MBE

在１０Ｋ低温下对分子束外延（ＭＢＥ）生长的ＣｄＴｅ（１１１）Ｂ／ＧａＡｓ（１００）／ＣｄＴｅ（２１１）Ｂ／ＧａＡｓ（２１１）Ｂ外延膜进行了光致发光（ＰＬ）测量，得到了ＰＬ谱和带边激子辐射的精细结构．计算得到束缚激子的半峰宽（ＦＷＨＭ）分别为０．２～０．ｓｍｅＶ和１～２ｍｅＶ．实验结果表明外廷膜的质量和生长工艺均良好．

he quality of CdTe(111)B/GaAs(100) and CdTe (211 )B/GaAd (211)B epilayers grown by MBE are characterized by photoluminescence measurement at 10K.Sharp and rich photoluminescence lines associated with free excitons (FE),the excitons bound to the neutral acceptors(A'X)and donors(D'X) are reported for the first time.The calculated values of FWHM for these bound excitons are approximately 0. 2￣0. 5meV and 1 ￣2meV,respectively.The results show that the epitaxial CdTe/GaAs film grown under optimized conditions could have as good crystal perfection as those grown on lattice-matched subs trates.