摘要
采用液相外延（ＬＰＥ）技术成功地研制出室温脉冲激发的ＧａＡｓ／ＡｌｘＧａｌ－ｘＡｓ双异质结激光器．脉冲电压３０Ｖ，频率１０ｋＨｚ，脉冲宽度约１μｓ，脉冲功率约１０ｍＷ，波长８５６．７ｎｍ．较详细地介绍了器件制作的后工艺过程．
Develops GaAs/AlxGa1-x As double heterojaltion semiconductor laser of room temperature pulse emisslion with liquid phase epitaxial technique. The pulse voltage is 30V,its frequency is 10kHz,the pulse width is about lps,the pulse power is about 10mW, the wave length is 857.6nm.The sub-technological process of semiconductor laser is described in detail.
基金
国家教委
山东省科委资助
关键词
双异质结激光器
液相外延生长
半导体激光器
Wafers
Diheterojunction lasers
Liquid phase epitaxial growth
Substrates
Epitaxial layers
