温度对1．3μm　InGaAsP半导体激光器增益特性的影响

Influence of Temperature on the Gain Characteristics of 1. 3μm InGaAsP Semiconductor Laser

使用计算机控制的测量系统，测量了１．３μｍＩｎＧａＡｓＰ／ＩｎＰ激光器的自发发射光谱，计算了增益谱，同时研究了最大增益与环境温度的依赖关系．利用实验结果对Ｌａｓｈｅｒ和Ｓｔｅｒｎ的简化分析模型作了拟合处理，得到发射复合系数与温度的依赖关系．

The spontaneous emission spectrum of the 1. 3μm InGaAsP/InP semiconductor laser was measured by a computer--controlled experimental set--up, and the gain spectrum was also calculated. The dependence of maximum gain on temperature was studied. The dependence of radiative recombination coefficient on temperature was abtained by fitting the experimental results to the analytical model of Lasher and Stern.