摘要
利用离子注入技术将Ar离子注入到YIG单晶薄膜中,剂量为(10 ̄(12)~10 ̄(14))ions/cm ̄2,能量为600keV。分别测量注入前后及退火后的样品的光吸收谱、法拉第旋转和拆射率,发现对样品实施退火,可有效地降低光损耗,增加法拉第旋转,调节薄膜折射率。
The ions were implanted into YIG film with dose of(10 ̄(12)~10 ̄(14))ions/cm ̄2 at an en-ergy of 600keV. The optical absorption spectrum. Faraday rotation,and refractive index were mea-sured for no- implanted,as-implanted and annealing samples.The results show that,by annealing the optlcal absorption resulting from implantation can be decreased;Faraday rotation can be in-creased;the refractive index of film can be adjusted.
出处
《压电与声光》
CSCD
北大核心
1995年第2期30-31,35,共3页
Piezoelectrics & Acoustooptics