含纳米硅的SiO_2薄膜电致发光的数值分析

Numerical study of electroluminescence from Si/SiO_2 films

考虑到薄膜中存在的缺陷对发光的影响,采用位形坐标为理论模型,对用射频溅射法制备的具有Au/(Si/SiO2)/p-Si结构样品的电致发光谱进行了数值分析.数值结果表明,在SiO2薄膜中存在2个缺陷中心,电子和空穴就是通过这些缺陷中心复合而发光.这一结论与实验符合得很好,并与量子限制效应-复合中心发光的理论结果相一致.

Due to luminescence can be affected by defect in the film, configuration coordinate is used as a theoretical model, a numerical study of electroluminescence from the devices with a Au/（Si/SiO2）/p-Si structure is given. The numerical result dedicate that there are two defect center in SiO2 films, electrons and holes are recombined through these center. The result agree well with experimental result, and it is also according with theoretical result of quantum efficiency-recombination center luminescence.