摘要
介绍了S波段低噪声放大器(LNA)的设计原理和流程.对影响电路稳定性和噪声性能的、易被忽视的因素进行了详细分析.文中重点分析实际电路可能产生的非连续性、寄生参数效应等因素对电路各个性能指标的影响,并针对这些因素进行了软件仿真计算,最后给出了放大器的仿真结果和最终的微带电路.放大器设计为两极结构,采用GaAsFET器件和双电源电路设计形式,达到了预定的技术指标,工作带宽2.0～4.0 GHz,增益G>22 dB,噪声系数NF<0.7 dB.
Design philosophy of S band low noise amplifier and the test data is presented,and the easily neglected factors which affect the noise performance and stability are analyzed in detail. Greatly different than previous works ,un-continuity,parasitic effect are emphasized in this paper. The final microstrip circuit and simulation data are provided. The amplifier used two -stages structure, and each stage is composed of GaAsFET device and dual biased sources. The final data is f=2. 0 - 4.0 GHz,G〉22 dB,NF〈0. 7 dB.
出处
《现代电子技术》
2005年第18期75-76,83,共3页
Modern Electronics Technique
