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高可靠大功率1.3μm发光二极管 被引量:2

High Reliability, High Power Light Emitting Diode at 1.3μm
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摘要 把1.3μm波长分段吸收式脊形波导结构发光二极管进行不同温度的加速老化寿命试验,共测试248500器件小时。该器件在25℃、150mACW的平均寿命为1.2×106h,其退化激活能Ea=0.48eV;与标准单模光纤耦合后,在25℃、100mA下的光功率大于30μW,最大可大于50μW。 m wavelength ridge waveguide light emitting diodes(RWG LEDs),which have seperated absorbing area,are taken to carry out lifetest in diferent temperatures.Almost 248,500 device hours are tested.1.2×106 hrs of lifetime(MTTF)can be got under the condition of 25℃ambient temperature and 150mA CW drive current;The degenerate activated energy is Ea=0.48eV;The light power of the RWG LEDs is more than 30μW,maximum can be more than 50μW,which are got from coupled standard single-mode fibre under 25℃ and 100mA DC drive current.
出处 《通信学报》 EI CSCD 北大核心 1996年第2期121-125,共5页 Journal on Communications
关键词 发光二极管 大功率 可靠性 二极管 light emitting diode,high power,reliability
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  • 1团体著者,1990年

同被引文献16

  • 1An H,Yany S,Sun H B,et al.1.48-μm InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers.SPIE,1996,2886:300
  • 2Yoshida J,Tsukiji N,Nakai A,et al.Highly reliable high-power 1480-nm pump lasers for EDFAs and Raman amplifiers.SPIE,2001,4285:146
  • 3Kintzer E S,Walpole J N,Chinn S R,et al.High-power stained-layer amplifiers and laser with tapered gain regions.IEEE Photonics Technol Lett,1993,5:605
  • 4Auzanneau S C,Calligero M,Krakowski M.High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980nm with high wavelength stability.Appl Phys Lett,2004,84:2238
  • 5Paschke K,Sumpf B,Dittmar F,et al.Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7W.IEEE J Sel Topics Quantum Electron,2005,11(5):1223
  • 6Kelemen M,Weber J,Rinner F,et al.High-brightness 1040-nm tapered diode lasers.Proc SPIE,2002,4947:252
  • 7Walpole J N,Betts G E,Donnelly J P,et al.High-power 1.3-μm InGaAsP/InP lasers and amplifiers with tapered gain regions.Proc SPIE,1997,3001:74
  • 8Cho S H,Fox S,Vusirikala V,et al.1.05W from the mostly diffraction-limited 1.55-μm InGaAsP/InP-tapered laser.CLEO,1998:247
  • 9Kallenbach S,Kelemen M T,Aidam R,et al.High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm.Proc SPIE,2005,5738:406
  • 10Walpole J N.Semiconductor amplifiers and lasers with tapered gain regions.Optical and Quantum Electron,1996,28:623

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