纯净化真空电弧沉积非晶硅薄膜

DEPOSITION OF AMORPHOUS SILICON FILMS USING PURIFIED VACUUM ARC

本文阐述了真空电弧沉积（ＶＡＤ）的各种净化方法，并讨论了纯净化的真空电弧在非晶硅膜层沉积方面的应用，包括在制造太阳能电池方面的应用前景。分析表明，真空电弧沉积非晶硅膜，关键在于合理设计弧源使电弧纯净化，采取各种有效方法抑制宏观颗粒对膜层的污染，同时采用适当的等离子体诊断设备，通过调节等离子体微观参数来控制膜层质量。

This paper reviews various methods to purify the plasma in Vacuum Arc Deposition (VAD), and some aspects of VAD in amorphous thin Silicon (a-Si)films deposition, such as the key problems in the deposition processes and the prospective of VAD-deposited Q-St in solar cells. It reveals that cathode source in a-Si deposition must be carefully designed to purify the arc column, i. e. to eliminate macroparticles from the deposition species. It is also important to diagnose and adjust the plasma parameters to improve film qualities.