摘要
本文通过Monte Carlo方法模拟计算了定量俄歇电子能谱分析(如对Ni的L3VV俄歇电子和Pt的M5N67N67俄歇电子)中的背散射因子。由于计算中结合了相关领域的各种最新进展,因此该新计算可以为定量俄歇电子能谱分析提供更为准确的参数。
Using a Monte Carlo simulation method a novel calculation on the backscattering factor in quantitative Auger electron spectroscopy (AES) analysis has been performed, for Ni L3VV and Pt M5N67 N67 Auger excitation as examples. Up-to-date advances in the related fields have been considered in the calculation, leading to more accurate results for quantitative AES analysis.
出处
《电子显微学报》
CAS
CSCD
2005年第6期541-546,共6页
Journal of Chinese Electron Microscopy Society
基金
National Natural Science Foundation of China(No.10025420,No.90206009)