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Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS

基于0.25μm MS/RF CMOS工艺的光电单片集成接收机设计(英文)
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摘要 A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF (mixed signal, radio frequency) CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC. 设计了一种单片集成的光电接收机芯片.在同一衬底上制作了基于同一工艺的光电二极管与接收机电路,以消除混合集成引入的寄生影响.这种单片集成接收机采用了先进的深亚微米MS/RF(混合信号/射频)CMOS工艺,利用这种新型工艺提供的新技术对原有光电二极管进行了改进,使其部分性能显著改善,并对整个光电集成芯片性能的提高有所帮助.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第2期323-327,共5页 半导体学报(英文版)
基金 国家高技术研究发展计划(批准号:2002AA312240,2003AA312040) 国家自然科学基金(批准号:60536030)资助项目~~
关键词 monolithically integrated OEIC CMOS process 单片集成 光电集成电路 CMOS工艺 光电接收机
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