摘要
用变分法计算了GaAs/Ga1-xAlxAs材料中束缚激子的基态能和结合能,并对计算结果进行讨论,得出当量子点半径取适当数值时人们有可能在更高温度下观测到量子点中的激子的结论.
This paper calculates the ground state energy and binding energy of abound exciton in GaAs/Ga1-xAlxAs material by using variational method and discussesthe results obtained. It gets the conclusion that the exciton in quantum dot can be observed in higher temperature if the value of the quantum dot radius is properly chosen.
出处
《福建师范大学学报(自然科学版)》
CAS
CSCD
1996年第3期17-20,共4页
Journal of Fujian Normal University:Natural Science Edition
关键词
量子点
束缚激子
激子
基态能
结合能
半导体
quantum dot,bound exciton,exciton ground energy,exciton bindind energy