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极性半导体异质界面上二维激子的极化子效应

Polaron Effects on 2D Excitons near a Polar Semiconductor Heterointerface
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摘要 计及电子-声子耦合计算了局域在极性-极性半导体异质结上的激子的结合能,得到了两支界面光学声子模对结合能的贡献.结果表明:对于重空穴激子结合能,界面声子起着重要作用,且两支界面声子模的贡献是可比拟的.对于GaAs/AlxGa1-xAs体系,讨论了构成异质结的混晶组份对结合能的影响. The binding energy of an exciton localized near a polar-Polar semiconductor heterojunction is calculated including the electron-phonon coupling. Both the contributions of the two branches of interface optical phonon modes to the binding energy are calculated. It is shown that the effect of the interface optical phonons plays an important role for the binding energy of the heavy-hole exciton and the two branches of the interface phonon mode give comparable contributions.The influences of the composition of the mixed crystals composing the heterojunctions on the binding energies are also discussed for GaAs/AxGa1-xAs systems.
出处 《内蒙古大学学报(自然科学版)》 CAS CSCD 1996年第5期627-634,共8页 Journal of Inner Mongolia University:Natural Science Edition
基金 国家自然科学基金 国家教委资助优秀年轻教师基金 内蒙古自治区自然科学基金
关键词 激子 界面声子 半导体 异质结 极化子效应 D exciton interface phonon mixed crystal
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参考文献6

  • 1班士良,Phys Rev B,1995年,51卷,2351页
  • 2班士良,Phys Lett A,1994年,192卷,110页
  • 3梁希侠,Surf Sci,1993年,298卷,225页
  • 4梁希侠,Z Phys B,1993年,91卷,455页
  • 5Wang X,Phys Rev B,1990年,42卷,8915页
  • 6Gu S W,Phys Rev B,1988年,37卷,8805页
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