分层沉积GaAs/SiO_2纳米薄膜的结构和吸收光谱

Micro-structure and Absorption Spectra of Multi-layer Deposited GaAs/SiO_2 Nano-films

应用射频磁控溅射方法分别在抛光硅片和石英玻璃片上分层沉积了GaAs/S iO2纳米薄膜。通过X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)及吸收光谱的测试,发现衬底温度、退火、氢掺杂等制备工艺对分层沉积的GaAs/S iO2纳米薄膜的微观结构和光学性质有明显的影响。本文对相关机理作了探讨。

GaAs/SiO2 films were deposited on the substrates of quartz glass and silicon slices layer by layer by radio frequency （RF） magnetron sputtering technique. The significant influences of substrate temperature, annealing and hydrogen doping technique on the crystal structure, morphology and optical properties of the GaAs/SiO2 films were observed by X-ray diffraction, AFM and SEM and optical absorption spectrum. The related mechanisms of the experimental results were explained accordingly.