掺硫和在不同温度下InP的正电子湮没研究

Study on InP Doped With Sulphur and Under DifferentTemperatures by Positron Annihilation

用正电子湮设方法研究了掺硫的ＩｎＰ载流于浓度（ｎ）、迁移率和温度对空位浓度的影响，并讨论了它们对空位浓度影响的机理．探讨了空位类型。

In this paper,the influences of charge carrier concentration(n),mobility andtemperature on vacancy concentration(Cd)were studied by positron annihilation inInp doped with sulphur.The mechanisms of the influences of charge carrierconcentration,mobility and temperature in vacancy are discussed.The types of vacancy are discussed too.