原子氢在Be(100)薄膜上吸附的第一性原理计算

First-principles calculation of atomic hydrogen adsorption on Be(100)thin films

对原子氢在Be(1010)薄膜表面的吸附性质做了第一性原理计算研究.根据原子面间距的不同,可把Be(1010)表面分为两种.计算结果表明,原子氢在这两种表面上的吸附性质显著不同.为阐明和分析这些不同,系统计算和分析了Be(1010)薄膜的表面电子结构、电子功函数、平均静电势和局域电荷密度.这些物理量都自洽地表明,吸附过程中原子氢和表面铍原子间的电荷转移过程对于两种表面是完全不同的.对于L型表面来说,电荷由吸附原子氢向表面Be原子层转移,而对于S型表面而言,电荷转移过程恰恰相反.

We present a first-principles study of the atomic hydrogen adsorption onto the Be（1010^-） thin film. There are two types of Be （1010^-）surfaces according to the interlayer spacing between the surface and its nearest-neighbor layer. We show that the H adsorption features on these two kinds of surfaces are remarkably different. The work function, averaged electrostatic potential, and the local charge density consistently show that the charge is transferred from H to Be for L-type surfaces, while the transfer process is inverted for S-type surfaces.