摘要
通过在狄拉克方程中考虑德拜休克尔(Debye-Hückel)屏蔽势,研究了类氢离子C5+低能级能量1s(2S1/2),2s(2S1/2),2p(2P1/2和2P3/2)随等离子体电子温度及电子密度的变化规律,计算得到类氢离子C5+能级能量及能级电离势随等离子体环境的变化关系。同时,拟合得到了基于德拜休克尔屏蔽势下相当好的束缚态能级能量随等离子体环境变化的解析公式,利用该公式得到了类氢离子C5+相应各能级发生压致电离的临界电子密度,其结果与其它文献比有很好的可比性。结果表明:束缚态能级能量随等离子体电子温度的升高而减小,随等离子体电子密度的增大而增大。能级能量百分漂移量的对数值与等离子体电子密度的对数值以及等离子体电子温度的对数值之间均呈现出近似线性关系。对计算等离子体电离态分布及光谱模拟具有一定的意义。
Considering the Debye-H/ickel screening potential into Dirac equation, the plasma electron temperature and density effects on the energies of bound state 1 s (^2S1/2 ), 2 s (^2 S1/2 ), 2 p (^2 P1/2 and 2 P3/2) for H-like ion C^5+ are studied. A fitted formula, which estimates the bound state energies and ionization potential of H-like ion C^5+ under different plasma conditions, is obtained. With this formula, the critical electron density of pressure ionization for bound levels is calculated, and agrees well with the data in previous literature. The results show that the energies of bound states increase with the increase of plasma electron densities or decrease of plasma electron temperatures. The relation between the logarithm of percentage shift of energy and the logarithm of plasma electron density or temperature is approximately linear. The results are useful in calculating the plasma ionization state distributions and plasma spectral simulations.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2006年第11期1755-1760,共6页
Acta Optica Sinica
基金
国家自然科学基金(10274089)资助课题