摘要
对快中子辐照的直拉硅分别进行了650℃和120℃快速(RTP)预热处理.450℃下不同时间热处理激发热施主,通过四探针测量电阻率和载流子浓度的变化规律,应用傅里叶红外光谱(FTIR)测量间隙氧含量的变化.实验表明经650℃预热处理,使辐照样品热施主的形成受到了抑制;Ar气氛RTP预处理条件下,随辐照剂量的增加热施主形成的总量会不断下降.N2气氛RTP预处理,使未辐照样品的热施主形成被抑制,气氛对辐照样品热施主的形成没有明显的影响.
The influence of pretreatment on the thermal donors （TD） in neutron-irradiated Czochralski silicon is investigated with four-point probe measurement and Fourier transform infrared spectrometry. The results show that the amount and the generation rate of the thermal donors are depressed after preheating treatment at 650℃. After rapid thermal processing at 1200℃ in N2 atmosphere, the number of the donors is depressed in irradiated silicon;but in Ar atmosphere, the number of the donors is depressed in non-irradiated silicon.
关键词
中子辐照
热施主
直拉硅
辐照缺陷
neutron irradiation
thermal donor
Czochralski silicon
irradiated defect
