摘要
采用有效质量近似下的包络函数方法,对在不同温度下的势垒区δ掺杂量子阱Si/Ge0.3Si0.7的势位及电子密度分布进行了自洽计算.详细地研究了温度对势位及电子密度分布的影响.
Abstract The potential and electron density distributions of barrier-δ-doped quantumwells Si/Ge0.3Si0.7 grown on the alloy Ge0.3Si0.7(001) at various temperatures are selfconsistently calculated in effective mass approximation.The effects of the temperature on thepotential and electron density distributions are studied in detail.
基金
国家自然科学基金