摘要
介绍了一种基于TRL法的提取管芯S参数的方法。该方法从TRL校准出发,实际测量得到封装器件的S参数;管芯以外的参量(管壳及键和线)用等效电路表示,最后用微波仿真软件模拟得到管芯S参数。此方法在没有精确的测试夹具条件下,仍可以得到较理想的器件和管芯S参数。实验证明该方法简便、实用性强,可推广应用于不宜直接测量管芯S参数的器件。
A method for extracting chip S-parameters was introduced based on the TRL (thru-reflectline). Reliedon the TRL calibration, the device S-parameters was got by practical measurement. The parasitic parameters (the case & wires) was expressed by equivalent circuit, the chip S-parameters could be extracted using the microwave similation software. The device S-parameters and chip S-parameters still could be ob tained without the precise test fixture. The experiments reveal that this method is simple and practical, it can be extended to any other kinds of microwave devices.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第2期174-177,共4页
Semiconductor Technology
关键词
TRL校准
管芯S参数
仿真
TRL calibration
chip S- parameters
similation