期刊文献+

通过TRL校准提取管芯S参数的技术 被引量:5

Method for Extracting Chip S -Parameters by TRL Calibration
下载PDF
导出
摘要 介绍了一种基于TRL法的提取管芯S参数的方法。该方法从TRL校准出发,实际测量得到封装器件的S参数;管芯以外的参量(管壳及键和线)用等效电路表示,最后用微波仿真软件模拟得到管芯S参数。此方法在没有精确的测试夹具条件下,仍可以得到较理想的器件和管芯S参数。实验证明该方法简便、实用性强,可推广应用于不宜直接测量管芯S参数的器件。 A method for extracting chip S-parameters was introduced based on the TRL (thru-reflectline). Reliedon the TRL calibration, the device S-parameters was got by practical measurement. The parasitic parameters (the case & wires) was expressed by equivalent circuit, the chip S-parameters could be extracted using the microwave similation software. The device S-parameters and chip S-parameters still could be ob tained without the precise test fixture. The experiments reveal that this method is simple and practical, it can be extended to any other kinds of microwave devices.
出处 《半导体技术》 CAS CSCD 北大核心 2007年第2期174-177,共4页 Semiconductor Technology
关键词 TRL校准 管芯S参数 仿真 TRL calibration chip S- parameters similation
  • 引文网络
  • 相关文献

参考文献5

  • 1ENGEN G F,HOER C A.Thru-reflect-line:an improved technique for calibrating the dual six-port automatic network analyzer[J].IEEE Transactions on Microwave Theory and Techniques,1979,27(12):987-993.
  • 2WILLIAMS D F,WANG C M,ARZ U.An optimal muhiline TRL calibration algorithm[J].IEEE MTT-S Digest,2003,1819-1822.
  • 3Anritsu vector network measurement system operation manual[K].1998:7.3-7.34
  • 4Applied wave research,Inc.MWO/VSS getting started guide[K].Version 6.51,2005.
  • 5王红欣,杨瑞霞,李书科.管芯S参数的提取技术[J].电子器件,2004,27(1):180-183. 被引量:2

二级参考文献2

  • 1ReinholdLudwig PavelBretchko 王子宇译.射频电路设计-理论与应用[M].北京:电子工业出版社,2002..
  • 2中国集成电路大全编委会.微波集成电路[M].北京:国防工业出版社,1995..

共引文献1

同被引文献22

引证文献5

二级引证文献16

;
使用帮助 返回顶部