蒙特卡罗方法模拟PVD薄膜生长的研究进展(综述)

Progress of Monte-Carlo Simulation of the Growth of thin Films by Physical Vapor Deposited

综述了蒙特卡罗方法模拟物理气相沉积薄膜生长的研究进展.特别对基底的表面形貌、结构缺陷、沉积温度等因素对薄膜生长影响的蒙特卡罗方法模拟的研究进展进行了分析和归纳.最后对蒙特卡罗方法模拟薄膜生长的研究进行了展望.

The progress of Monte-Carlo simulation of the growth of thin films is reviewed. The effect of many factors on the growth of thin films is especially analyzed and generalized, such as surface topography, structure defect of substrate, deposition temperature, and so on. At last, the study of using Monte-Carlo method to simulate the growth of thin films by physical vapor deposited is also predicted.