热处理对硅片抗弯强度的影响

EFFECT OF HEAT TREATMENT ON FLEXURE STRENGTH OF SILICON WAFER

研究了热处理温度、时间及降温方式对不同氧、氮含量的氩气氛直拉硅（ＡＣＺ）及氮气氛直拉硅（ＮＣＺ）抗弯强度（σ）的影响规律。结果表明：硅氧络合物和氮硅氧络合物的生成使抗弯强度提高，沉淀的形成使强度下降。提出了既能消除热施主。

The effects of heat treatment temperature, time and cooling way on the flexure strength of ACZ and NCZ silicon wafers with various contents of oxygen and nitrogen were studied. The strength of silicon wafer was increased by the formation of silicon oxygen and nitrogen silicon oxygen complexes and was decreased by the formation of silicon oxygen and nitrogen silicon oxygen precipitates. A new two step cooling technique eliminating heat donor and preventing the decrease of strength was suggested.