期刊文献+

极性晶体中界面强耦合激子的性质

The Properties of the Strong-coupling Interface Exciton in Polar Crystals
下载PDF
导出
摘要 采用线性组合算符和变分法研究了极性晶体中激子与IO声子强耦合、与LO声子弱耦合体系的基态能量,推导出了激子的自陷能和诱生势的表达式,并以AgCl/AgBr晶体为例进行了数值计算。结果表明,轻空穴激子的自陷能不仅与激子的坐标z有关,而且电子—空穴间距离ρ对激子自陷能的影响也十分显著;轻空穴激子和重空穴激子的诱生势不仅与电子—空穴间距离ρ有关,而且激子距离晶体界面的位置z对诱生势的影响也十分显著。 The ground state energy of the system,which is the exciton interaction bulk longitudinal-optical(LO) phonons and strong-coupling interface-optical(IO) investigated by using the linear-combination operator and the variational method. the induced potential of the exciton are derived. Numerical calculations for the both with the weak-coupling phonons in a polar crystal, is The self-trapping energy and AgCI/AgBr crystal interface show that the self-trapping energy of the light hole exciton depends not only on the coordinate z , but also on the distance ρ between electron and hole; the induced potentials of the light hole exciton and the heavy hole exciton relates not only to the distance ρ between electron and hole, but also to the position coordinate z of the exciton.
出处 《河北科技师范学院学报》 CAS 2007年第1期13-18,28,共7页 Journal of Hebei Normal University of Science & Technology
基金 内蒙古自然科学基金(项目编号:200208020110)资助课题 河北科技师范学院博士基金(项目编号:2006D001)资助课题
关键词 轻空穴激子 重空穴激子 自陷能 诱生势 light hole exciton heavy hole exciton self-trapping energy induced potential
  • 引文网络
  • 相关文献

参考文献21

  • 1梁希侠.极性半导体表面激子的结合能.半导体学报,1985,4(3):209-214.
  • 2顾世洧.晶格振动对激子运动的影响.物理学报,1979,28(6):751-758.
  • 3XIAO J L.Ground state energy of an exciton coupled to acoustic phonons in 2D crystals[J].Phys Stat sol(b),1991,165:449-455.
  • 4XIAO W,XIAO J L.The influence of the interaction between phonons on the properties of the exciton in polar crystals[J].Phys Stat sol(b),1996,198:751-760.
  • 5MORI N,ANDO T.Electron-phonon interaction in single and double heterostructures[J].Phys Rev,1989,B40:6 175-6 180.
  • 6LIANG X X,WANG X.Electron-phonon interaction in a quantum well[J].Phys Rev,1991,B43:5 155-5 161.
  • 7MIAO J Q,YANG Q L,GU S W.Exciton-phonon system in a polar semiconductor quantum well[J].Phys Rev,1989,B40:9 846-9 857.
  • 8CHUN D S,WON W L,PEI J H.Longitudinal-optical-phonon effects on the exciton binding energy in a semiconductor quantum well[J].Phys Rev,1994,B49:14 554-14 563.
  • 9ZHENG R S,MATSUURA M.Exciton-phonon interaction effects in quantum well[J].Phys Rev,1997,B56:2 058-2 061.
  • 10元丽华,王旭.抛物阱中极化子效应对激子的影响[J].内蒙古大学学报(自然科学版),2004,35(4):391-395. 被引量:4

二级参考文献28

  • 1Sajoto T,Jo J,Engel L,et al. Subband structure of nearly free,uniform-density,dilute electron system in a wide quantum well [J].Phys.Rev.,1989,B39:10 464~10 466.
  • 2Yang Chu-liang,Yang Qing. Sublevels and excitons in GaAs-AlxGa 1-xAs parabolic-quantum- well struvtures [J].Phys.Rev.,1988,B37:1 364~1 367.
  • 3Fenniche H,Mandhour L,Jaziri S,et al.Confined exciton-polaritons in parabolic and Gaussian quantum wells [J].Semicond.Sci.Technol.,1997,12:796~801.
  • 4Kyrychenko F,Kossut J. Excitons in parabolic quantum wells [J].Semicond.Sci.Technol.1998,13:1 076~1 079.
  • 5Ercelebi A,Ozdincer U. Binding energy of the exciton-phonon system in GaAs-Ga 1-xAlxGaauantum well structure [J].Solid State Commun.,1986,57:441~444.
  • 6Degani M H,Hipolito O. Polaron effect on excitons in GaAs-Ga 1-xAlxAs quantum well [J].Phys.Rev.,1987,B35:4 507~4 510.
  • 7Moukhliss S,Fliyou M,Sayouri S. Longitudinal-optical-phonon effects on excitons inGaAS-Ga 1-xAlxAs quantum well [J].Phys.Stat.Sol.,1996,B196:121~130.
  • 8Degani M H,Farias G A. Exciton binding energy in type-II heterojuctions [J].Phys.Rev.,1990,B42:11 701~11 707.
  • 9Miao Jing-qi,Yang Qian-li,Gu Shi-wei. Exciton-phonon system in a polar semiconductorquantum well [J].Phys.Rev.,1989,B40:9 846~9 857.
  • 10Chun Der-san,Won Win-long, Pei Jui-hsiang. Longitudinal-optical-phonon effects on the exciton binding energy in a semiconductor quantum well [J].Phys.Rev.,1994,B49:14 554~14 563.

共引文献5

;
使用帮助 返回顶部