无紫外光照射下n型15R-SiC及6H-SiC晶体的电化学腐蚀

Electrochemical etching of n-type 15R-SiC and 6H-SiC without UV illumination

本文在无紫外光照射下通过电化学腐蚀法制备了多孔n型15R-及6H-SiC,并用扫描电子显微镜(SEM),拉曼散射及X射线衍射仪(XRD)对多孔层的结构进行了分析。结果表明:晶体的晶型及氧化条件等因素对多孔结构有较大影响。首次观察到多孔n型15-SiC的半圆管状结构,其孔隙率约是66%。

The porous n- type 15R- SiC and 6H- SiC were prepared by electrochemical etching without external illumination. The porous layers were analyzed using scanning electron microscopy （SEM）, Raman scattering, and X- ray diffraction （XRD）. The porous structures depend on the crystal structure of substrates and anodization conditions. For the porous 15R - SiC, the semi - cylinder structure of the porous network has been observed and the porosity is about 66 %.