多孔硅基热敏薄膜的制备与性能

Preparation and Performance of Thermal Sensitive Thin Film on Porous Silicon Substrate

对MEMS用具有绝热性能的多孔硅基底上沉积的热敏感薄膜进行了研究.首先用电化学方法制备多孔硅,分别在多孔硅基底和硅基底上通过溅射镀膜方法沉积氧化钒、Cu、Au热敏薄膜,测试多孔硅基底和硅基底上的氧化钒及金属薄膜电阻的热敏特性.结果表明,在多孔硅基底表面沉积的热敏薄膜具有与硅基表面热敏薄膜同样的热敏特性且表现出更高的灵敏度;此外,对沉积在不同制备条件得到的多孔硅上的氧化钒薄膜电阻热敏特性进行比较,发现随着孔隙率和厚度的增加,多孔硅的绝热性能提高,其上沉积的氧化钒薄膜电阻热敏特性增强.

In this paper, the performance of thermal sensitive thin film on porous silicon（PS） substrate, which has better thermal insulation effect and is used in MEMS, was studied. After preparing PS using the electrochemical method, VOx film and metal （Cu, Au） film were separately deposited on silicon substrate and PS silicon substrate. The characteristics of resistance-power of each material on both kinds of substrate were examined. It was found that PS has better thermal insulation effect and the thermal-sensitivity of resistance deposited on PS layer is higher than that on silicon substrate. Moreover, VOx and metal film have high quality of resistance-temperature characteristics when they are deposited on PS. The thermal insulation effect and the thermalsensitivity of resistance deposited on PS layer improve when the porosity and thickness of PS increase, which was proved by the resistance-power curve of VOx film deposited on PS prepared with different process parameters.