用于AgGaS_2晶体生长的石英安瓿镀碳工艺研究

Study of the carbon coating on quartz ampoules for AgGaS_2 crystal growth

采用金相显微镜、推力分析仪等测试手段研究了石英安瓿内壁镀碳工艺对所镀碳膜的表面形貌、碳膜和石英安瓿结合力的影响。获得了一个较佳的镀碳工艺,即在气体流量为600 ml/min,镀碳温度在1060℃-1100℃之间,镀碳时间为30 min,冷却时间为11 h的条件下可获得均匀、致密而且与石英安瓿内壁结合牢固的碳膜层。采用该工艺镀膜的石英安瓿生长的AgGaS2晶体完整,表面光洁透明,位错密度低,约为6×10^4cm^-2。

The carbon films coated on the inner surface of quartz ampoules in different technological conditions were tested and analyzed by microscope and thrust analytic instrument.The morphology and etching pits of crystals,which grew in these ampoules,were also observed.The effect of the technology parameters on the surface topography of carbon films and the binding force between carbon films and the inner surface of quartz ampoules were studied.And the preferable technical parameters of carbon coating are obtained,i.e.the gas-flow rate of 600 ml/min,carbon coating temperature of 1060℃～1100℃,the carbon coating time of 30 minutes and the cooling time of 11h.Under the condition,the thickness of carbon films is more uniform and its binding with quartz ampoule is much stronger.Moreover the as-grown AgGaS2 crystal is transparency,it has smoother surface and lower dislocation density.