摘要
本文报道了用反应离子刻蚀（RIE）与晶向湿法化学腐蚀（XWCE）相结合沿InP衬底（110）方向获得工作波长1．3μm的InGaAsP／InP双异质结激光器的腔面的方法．用CH4：H2：Ar2的混合物作干法刻蚀的反应气体，用H2SO4：HCl：H2O2作湿法腐蚀的腐蚀剂，我们获得了质量较好的激光器的光学腔面．用一个刻蚀腔面与一个解理面组成激光器的F－P腔，我们获得了它的宽接触阈值电流和微分量子效率与用传统的解理腔面的激光器的宽接触阈值电流与微分量子效率相当的激光器．
We report the use of reactive-ion etching(RIE) and crystallographic wet chemical etching(XWCE)to form mirror facets on InGaAsP/InP double-heterostructure lasers (λ= 1. 3μm) along InP substrate (110) orientation and the reactive gas and chemical etching solution used in this experiment are CH4: H2: Ar2 mixture and H2SO4: HCl: H2O2(1: 1: 8),respectively. Lasers, in which one of the facet mirrors is etched by this technique and the other is formed by cleaving, have threshold currents and quantum efficencies comparable to those 0f lasers with conventionally cleaved mirrors.
基金
国家自然科学基金
集成光电子学国家重点实验室资助
关键词
半导体激光器
双异质结
刻蚀腔
Etching
Heterojunctions
Laser resonators
Semiconductor lasers
