磁控溅射含Ti非晶碳膜的微观结构分析

Characterization of Microstructure of Magnetic Sputter Deposited Ti-Containing Amorphous Carbon Films

用磁控溅射方法制备了含Ti4at％，18at％，27at％的非晶碳膜。用XPS分析了含Ti18at％碳膜的碳键结构、化合物组成。结果发现：碳膜的C1s峰在284eV附近，碳膜中sp^2：sp^3=14．6：6．3，sp^2占明显优势，碳键结构以sp^2为主；Ti2p谱的455．2eV处的峰对应TiC，说明形成了TiC。用XRD对含Ti4at％，18at％，27at％碳膜进行物相分析。结果发现：含Ti18at％和27at％时，都存在TiC（111），TiC（200）和TiC（220）晶向，但27at％的Ti（111）取向更加明显；4at％时，没有发现TiC相。TEM的分析结果证明，含Ti18at％的碳膜在非晶的基体上分布有TiC的颗粒。四点探针法（FPM）测定3种非晶碳膜的电阻率分布在9×10^-5-2×10^-4Ωm之间，随着Ti含量的增加，电阻率减小。可以认定：磁控溅射制备的碳膜是碳键结构以sp^2为主的非晶碳膜，加入一定量Ti后，在非晶的基体上形成Ti化合物的晶体颗粒。

Ti-containing carbon films with Ti 4at%, 18at%, 27at% were prepared using magnetron sputtering deposition. The microstructure of the carbon films have been characterized in detail by combining the techniques of X-ray Photoelectron Spectroscopy （XPS）, X-ray diffraction （XRD）, Transmission electron microscope （TEM）, and Four probe electric receptivity measurement method （FPM）. It is found that： the Cls peak of Ti 18at% carbon film appears at 284 eV, divided into 283.29 eV and 284.55 eV representing sp^2 and sp^3 respectively, sp^2：sp^3=14.6：6.3, characterized by sp^2 hybridization; the Ti2p peak appears at 455.2 eV, representing the form of TiC. The XRD of Ti 18at% and 27at% exist TiC（111）, TIC（200） and TIC（220）, for Ti 27at%, TIC（111） intensity increase. XRD of Ti4at% doesn＇t find the form of TiC. The electrical resistivity of carbon films is between 9 × 10^-5-2 × 10^-4Ωm, and decrease with the increase of Ti content. Ti-containing films are nanocomposites with nanocrystalline TiC clusters embedded in an amorphous carbon matrix.