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固态平面电路的抗微放电技术 被引量:2

Anti-Multipaction Technology of the Solid State Planar Circuit
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摘要 随着科学技术的发展,大功率固态发射组件已不断运用于星载产品,而真空微放电现象使得星载固态大功率技术受到了限制。本文在二次电子倍增效应的机理和电磁场仿真的基础上分析了固态平面电路易发生微放电的部位,并采用了一种独特的印制板拼接结构避免了微放电缝隙的产生,同时在印制板的表面真空镀PARYLENE膜,降低了微带传输线的微放电阈值。采用这些技术研制的大功率固态发射组件,真空环境下输出的最大峰值功率超过350W未发生微放电。 With the development of science and technology, high power solid-state transmitter module is more and more used in satellite-borne products, but the satellite-borne solid-state high power technology is limited by the multipaction Phenomena in the vacuum. This paper analyze the position where the multipaction always happens in the solid-state planar circuit on the basis of mechanism of twice-electron-doubling-effect and electromagnetic field simulation, and a kind of specific PCB assembly structure is adopted to avoid the coming-up of the lacune, where the multipaction would produce, meanwhile on the surface of the PCB the film PARYLENE is vacutun-plated to reduce the multipaction threshold of micro-strip line. The high-power transmitter modules that adopt the technology mentioned above is working normally in the vacuum environment with the maximum peak power over 350W, no multipaction occurs.
作者 邓云伯
出处 《微波学报》 CSCD 北大核心 2007年第B08期120-122,共3页 Journal of Microwaves
关键词 固态平面电路 发射组件 微放电 Solid-state planar circuit, Transmitter module, Multipaction
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