期刊文献+

密度泛函方法研究NiSin(n=1~13)团簇 被引量:8

A density functional theory investigation of NiSi_n(n=1~13)clusters
下载PDF
导出
摘要 基于第一性原理,利用密度泛函理论中的广义梯度近似(GGA)系统研究了NiSin(n=1~13)团簇,在充分考虑自旋多重度的基础上讨论了这些团簇的生长行为,电子性质及其磁性.结果表明:NiSin+1的基态结构是在NiSin的基态结构上带帽一个Si原子而得到;随着团簇尺寸的增大,Ni原子逐渐从吸附在Sin团簇的表面位置移动到Sin团簇笼内;掺杂Ni原子提高了硅团簇的稳定性;NiSi10团簇的稳定性在所有团簇中是最高的;电子总是从Si向Ni转移,Ni原子所带的电荷数不仅与Ni原子的配位数有关,还与NiSin团簇的基态结构密切相关;当n=1~2时,团簇的自旋总磁矩为2μB,当n≥3时,团簇的磁性消失,这可能与Ni原子内部较强的sp-d杂化以及Si原子内部的s-p杂化有关. Based on the first principles, NiSin ( n = 1 - 13) clusters have been systematically investigated by using the density functional theory with the generalized gradient approximation. The growth patterns, electronic properties and magnetism of NiSin clusters with different spin multiplicities are discussed in detail. The calculated results indicate that the stable NiSin + 1 geometries are generated with one Si atom being face capped on the stable NiSin clusters;Ni atom gradually moves from the surface-absorbed site to the concave site of the silicon cage with increasing size of NiSin clusters;the doping of Ni atom can enhance the stability of the Sin clusters;the NiSi10 cluster is the most stable specie of all different-sized clusters; charges always transfer from Si atoms to Ni atom in all-sized NiSin clusters,charges of Ni atom are relation to not only coordination numbers of Ni atom but also the ground state structure of NiSin clusters;the total spin magnetic moment of NiSin cluster is about 2μB at n = 1,2,and the spin magnetic moment of NiSin cluster is quenched when n surpasses 2, the strong hybridization between Ni 3d, 4s, 4p and Si 3s, 3p states might be one major reason for quenching the magnetic moment of NiSin cluster.
出处 《原子与分子物理学报》 CAS CSCD 北大核心 2008年第3期551-558,共8页 Journal of Atomic and Molecular Physics
基金 国家自然科学基金(10174086)
关键词 NiSin团簇 稳定结构 电子性质 磁矩 NiSin Cluster, equilibrium geometry, electronic property, magnetic moment
  • 相关文献

参考文献28

二级参考文献71

  • 1赵普举,侯榆青,郭平,陈浩伟,任兆玉.密度泛函方法研究NbSi_n(n=1~6)团簇[J].西北大学学报(自然科学版),2005,35(3):277-282. 被引量:4
  • 2[1]Raghavachari K,Rohlfing C M. Bonding and stabilities of small silicon clusters:a theoretical study of Si7-Si10[J]. J. Chem. Phys. Lett.,1988,89:2219~2234.
  • 3[2]Ho K M, Shvartsburg A A, Pan B, et al. Structures of medium-sized silicon clusters[J]. Nature. 1998, 392:582~585.
  • 4[3]Menon M, Subbaswamy K R. Nonorthogonal tight-binding molecular-dynamics study of silicon clusters [J]. Phys. Rev., 1993,B47:12 754~12 759; Transferable nonorthogonal tight-binding scheme for silicon [J]. Phys. Rev., 1994, B50:11 577~11 582; Nonorthogonal tight-binding molecular-dynamics scheme for silicon with improved transferability [J]. 1997,55:9231~9234.
  • 5[4]Deaven D M, Ho K M. Molecular geometry optimization with a genetic algorithm [J]. Phys. Rev. Lett., 1996,75: 288~291.
  • 6[5]Hess S, in Hoffmann K H, Schreiber (Eds) M. Computational Physics[M]. Springer-Verlag Berlin Heidelberg, 1996.
  • 7[6]Harrison W A. Electronic Structure and Properties of Solids [M]. Freeman, San Francisco, 1980.
  • 8[7]Arnold C C, Neumark D M. Study of Si4 and Si-4 using threshold photodetachment(ZEKE) spectroscopy[J]. J. Chem. Phys., 1993,99:3 353~3 362.
  • 9[8]Honea E C. Raman spectra of size-selected silicon clusters and comparison with calculated structure[J]. Nature,1993,366:42~44.
  • 10[9]Li S, Van Zee R J, Weltner W Jt, et al. Si3-Si7, Experimental and theoretical infrared spectra [J].1995,243:275~280.

共引文献19

同被引文献132

引证文献8

二级引证文献21

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部