期刊文献+

双层金属电极对硅功率晶体管结温的改善 被引量:3

Improvement on Junction Temperature of Silicon Power Transistor with Double Layers Metal Electrodes
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摘要 通过红外热相分析发现,在直流工作条件下,双层金属电极硅功率晶体管芯片比单层金属电极的结温低10℃以上;在微波工作条件下,双层金属电极芯片的结温比单层金属电极的低43.7℃。试验结果表明,双层金属电极能够改善硅微波功率晶体管芯片内微波输入功率和结温分布的均匀性。 This paper presents an improved result for the silicon power transisitor with double layers metal electrodes. The junction temperature in chip of silicon power transistor with double layers metal electrodes is at least 10 ℃ and 43. 7 ℃ lower than that with single layer metal electrode under direct current condition, and under microwave condition, respectively. From the tested infrared ray photograph it is concluded that double layers metal electrodes can improve on the distributing of input microwave power and junction temperature in the silicon power transistor chip.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2008年第3期383-387,共5页 Research & Progress of SSE
关键词 微波 功率晶体管 结温 热阻 microwave power transistor junction temperature thermal resistance
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参考文献2

  • 1Gao Guangbo,Wang Minzhu,Gui Xiang. Thermal design studies of high-power heterojunction bipolar transistors [J]. IEEE Transactions on Electron Devices, 1989,36..854-863.
  • 2Frey R, Kane M. Temperature effects examined for microwave power-transistor performance and thermaldesign considerations[J]. MSN & CT, 1985, 15 (12):66-77.

同被引文献15

  • 1柏松,韩春林,陈刚.4H-SiC MESFET的反应离子刻蚀和牺牲氧化工艺研究[J].电子工业专用设备,2005,34(11):59-61. 被引量:5
  • 2张允诚,胡如南,向荣.电镀手册[M].北京:国防工业出版社,2006:262.
  • 3傅义珠,张树丹,高雷,等.2GHz100W硅脉冲功率晶体管[C].电子信息技术的理论与实践--中国电子学会第六届青年学术年会,2000:279-281.
  • 4ROZEN J. Electronic properties and reliability of the SiO2/ SiC interface [ D]. Tennessee: Vanderbilt University, 2008 : 5 - 9.
  • 5SHI T F, MALLINGER M, LEVERICH L, et al. 800 W UHF SiC SIT transistor for radar application[C] //Procee- dings of IEEE MTT-S International Microwave Symposium Di- gest. Atlanta, GA, 2008: 69- 72.
  • 6AGARWAL A K, RYU S H, RICHMOND J, et al. Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H SiC[C] // Proceedings of 2003 IEEE the 15th International Sym- posium on Power Semiconductor Devices and ICs. Cambridge, UK, 2003: 135-138.
  • 7SADLER R A, ALLEN S T, PRIBBLE W L, et al. SiC MES- FET hybrid amplifier with 30 W output power at 10 GH2[C] // Proceedings of 2000 IEEE/Cornell Conference on High Perfor- mance Devices. Ithaca, NY, USA, 2000: 173-177.
  • 8宋南辛.晶体管原理[M].北京:国防工业出版社,1980.3453.
  • 9MichaelQuirk JulianSerda(美).半导体制造技术[M].北京:电子工业出版社,2004..
  • 10田爱华,崔占东,赵彤,刘英坤.高频4H-SiC双极晶体管的研制[J].半导体技术,2009,34(1):58-61. 被引量:2

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